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| MATRA MHS HM 65756 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 x 8 bits. It is manufactured using MHS's high performance CMOS technology. Access time as fast as 15 ns are available with maximum power consumption of only 880 mW. The HM 65756 features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by 80 % when the circuit is deselected. Easy memory expansion is provided by an active low chip select (CS) an active low output enable (OE), and three state drivers. All inputs or outputs of the HM-65756 are TTL compatible and operate from single 5 V supply thus simplifying system design. For military application the HM 65756 is processed according to the methods of the latest revision of the MIL STD 883. Features D Fast access time Commercial : 15/20/25/35/45 ns Industrial : 20/25/35/45 ns Automotive/military : 25/35/45 ns D Low power consumption Active : 880 mW Standby : 220 mW D Wide temperature range : - 55C to + 125C D D D D 300 and 600 mils width package TTL compatible inputs and outputs Asynchronous Capable of withstanding greater than 2 000 V electrostatic discharge D Output enable D Single 5 volt supply D 3.3 v versions are also available. please consult sales Interface Block Diagram Rev. C (11/04/95) 1 HM 65756 Pin Configuration MATRA MHS Pin Names A0-A14: Address inputs I/00-I/07 VCC GND : Inputs/Outputs : Power : Ground CS OE W : Chip-select : Output enable : Write Enable Truth Table CS H L L L OE X L X H W X H L H INPUT/OUTPUT Z Output Input Z MODE Deselect/ Power down Read Write Output Disable L = Low, H = High, X = H or L, Z = High impedance. Electrical Characteristics Absolute Maximum Ratings Supply voltage to GND potential : . . . . . . . . . . . . . . . -0.5 V to +7.0 V DC input voltage : . . . . . . . . . . . . . . . . . . . . . . . . . . . -3.0 V to +7.0 V DC output voltage in high Z state : . . . . . . . . . . . . . . -0.5 V to +7.0 V Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C Output current into outputs (low) : . . . . . . . . . . . . . . . . . . . . . . . 20 mA Electro Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . > 2000 V (MIL STD 883 METHOD 3015) Operating Range OPERATING VOLTAGE Military Automotive Industrial Commercial (- 2) (- A) (- 9) (- 5) 5 V 10 % 5 V 10 % 5 V 10 % 5 V 10 % OPERATING TEMPERATURE - 55_C to + 125_C - 40_C to + 125_C - 40_C to + 85_C - 0_C to + 70_C DC Operating Conditions PARAMETER Vcc Gnd VIL VIH DESCRIPTION Supply Voltage Ground Input low voltage Input high voltage MINIMUM 4.5 0.0 - 0.3 2.2 TYPICAL 5.0 0.0 0.0 - MAXIMUM 5.5 0.0 0.8 VCC UNIT V V V V 2 Rev. C (11/04/95) MATRA MHS DC Parameters PARAMETER IIX IOZ IOS VOL VOH Note : (2) (3) (4) (5) (2) HM 65756 DESCRIPTION Input leakage current Output leakage current Output short circuit current Output low voltage Output high voltage MINIMUM - 10.0 - 10.0 - - 2.4 TYPICAL - - - - - MAXIMUM 10.0 10.0 - 300.0 0.4 - UNIT A A mA V V 2. Gnd < Vin < Vcc, Gnd < Vout < Vcc Output disabled. 3. Vcc = max, Vout = Gnd, duration of the short circuit should not exceed 30 seconds. Not more than 1 output should be shorted at one time. 4. Vcc min, IOL = 8.0 mA. 5. Vcc min, IOH = -4.0 mA. Consumption for Commercial (-5) Specification SYMBOL ICCSB ICCSB1 ICCOP (6) (7) (8) PARAMETER Standby supply current Standby supply current Dynamic operating current 65756 E-5 30 10 155 65756 F-5 40 20 160 65756 H-5 35 20 160 65756 K-5 35 20 150 65756 M-5 35 20 150 UNIT mA mA mA VALUE max max max Consumption for Automotive (-A), Industrial (-9) and Military (-2) Specification SYMBOL ICCSB ICCSB1 ICCOP Note : (6) (7) (8) PARAMETER Standby supply current Standby supply current Dynamic operating current 65756 F-9 40 20 170 65756 H-9/-2 /-A 35 20 170 65756 K-9/-2 /-A 35 20 160 65756 M-9/-2 /-A 35 20 160 UNIT mA mA mA VALUE max max max 6. CS VIH, a pull-up resistor to Vcc on the CS is required to keep the device unselected during the Vcc power-up. Otherwise IccSB will exceed the above values. Min duty cycle = 100 %. 7. CS VCC - 0.3 V, VIN - 0.3 V or VIN 0.3 V. 8. VCC max, Output current = 0 mA, f = max, Vin = Vcc or Gnd. Capacitance PARAMETER Cin Cout Note : (1) (1) DESCRIPTION Input capacitance Output capacitance MINIMUM - - TYPICAL - - MAXIMUM 5 7 UNIT pF pF 1. TA = 25C, f = 1 MHz, Vcc = 5.0 V, these parameters are not tested. Rev. C (11/04/95) 3 HM 65756 AC Parameters Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns MATRA MHS Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V Output loading IOL/IOH (see figure 1a and 1b) : . . . . . . . . . . . +30 pF AC Test Loads and Waveforms Figure 1 a Figure 1 b Figure 2 Write Cycle Specification : Automotive, Commercial, Industrial and Military (note 9) SYMBOL TAVAV TAVWL TAVWH TDVWH TELWH TWLQZ(8) TWLWH TWHAX TWHDX TWHQX Note : (8) PARAMETER Write cycle time Address set-up time Address Valid to write end Data set-up time CS low to write end Write low to high Z Write pulse width Address hold from write end Data hold time Write high to low Z 65756 E-5 15 0 10 9 10 7 9 0 0 3 65756 F-5/-9 20 0 15 10 15 10 15 0 0 3 65756 H-5-9/ -2/-A 25 0 20 15 20 (*) 13 20 (*) 0 0 3 65756 K-5/-9/ -2/-A 35 0 30 17 30 15 25 0 0 3 65756 M-5/-9/ -2/-A 45 0 40 20 40 20 30 0 0 3 UNIT ns ns ns ns ns ns ns ns ns ns VALUE min min min min min max min min min min 8. Specified with CL = 5 pF (see figure 1b). (*) For commercial (-5) and PDIL, package value is 16 ns. 4 Rev. C (11/04/95) MATRA MHS Write Cycle 1 : W Controlled (note 9) HM 65756 Write Cycle 2 : CS controlled (note 9) Note : 9. The internal write of the memory is defined by the overlap of CS LOW and W LOW to initiate a write and either signal can terminate a write by going HIGH. The data input setup and hold timing should be referenced to rising edge of the signal that terminates the write. Data out will be high impedance if OE = VIH. Rev. C (11/04/95) 5 HM 65756 Read Cycle Specification : Automotive, Commercial, Industrial and Military SYMBOL TAVAV TAVQV TAVQX (10) TELQV TELQX (10) TEHQZ (10) TELIC TEHICL TGLQV TGLQX (10) TGHQZ (10) Note : MATRA MHS PARAMETER Read cycle time Address access time Address valid to low Z Chip-select access time CS low to low Z CS high to high Z CS low to power up CS high to power down Output Enable access time OE low to low Z OE high to high Z 65756 E-5 15 15 3 15 3 7 0 15 7 0 7 65756 F-5/-9 20 20 3 20 3 10 0 20 10 0 10 65756 H-5-9/ -2/-A 25 25 3 25 3 13 0 20 15 3 13 65756 K-5/-9 -2/-A 35 35 3 35 3 15 0 20 20 3 15 65756 M-5/-9 -2/-A 45 45 3 45 3 20 0 25 20 3 20 UNIT ns ns ns ns ns ns ns ns ns ns ns VALUE min max min max min max min max max min max 10. Specified with CL = 5 pF (see figure 1b). Read Cycle 1 (note 11, 12, 13) Read Cycle 2 (note 11, 13) Notes : 11. W is high for read cycle. 12. Device is continuously selected, CS = VIL, OE = VIL. 13. Address valid prior or coincident with CS transition low. 6 Rev. C (11/04/95) MATRA MHS HM 65756 DEVICE TYPE 65756 GRADE F LEVEL -5 : RD R RD -5 -9 -2 -8 -A R RD : : : : : : Tape & Reel option : Tape & Reel/Dry pack Ordering Information PACKAGE HM U 32 K x 8 speed static RAM 0 - Chip form 1 - Ceramic 28 pins 300 mils 1E - Ceramic 28 pins 600 mils 3 - Plastic 28 pins 300 mils 3E - Plastic 28 pins 600 mils 4J - LCC 32 pins 4P - LCC 28 pins T- SOIC 28 pins 300 mils U - SOJ 28 pins E = 15 ns* F = 20 ns H = 25 ns K = 35 ns M = 45 ns N = 55 ns Commercial Industrial Military Military with B.I Automotive : Tape & Reel option : Tape & Reel/Dry pack option * available in commercial range on PDIL.3 (code 3) and SOJ (code U). For other package please consult your sales office. The information contained herein is subject to change without notice. No responsibility is assumed by MATRA MHS SA for using this publication and/or circuits described herein : nor for any possible infringements of patents or other rights of third parties which may result from its use. Rev. C (11/04/95) 7 |
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